Study of interdiffusion in amorphous Si/Ge multilayers by Rutherford backscattering spectrometry

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 161, Issue , 2000, Pages 471-475

  Simon, A ^a   Csik, A ^b   Paszti F ^c   Kiss, A Z ^a   Beke, D L ^b   Daroczi L ^b   Erdelyi Z ^b   Langer, G A ^b  

^a INSTITUTE OF EXPERIMENTAL MEDICINE   (Hungary)

^b UNIVERSITY OF DEBRECEN   (Hungary)

^c WIGNER RESEARCH CENTRE FOR PHYSICS   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; MAGNETRON SPUTTERING; MULTILAYERS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

AMORPHOUS MULTILAYERS; DIFFUSION ASYMMETRY;

INTERDIFFUSION (SOLIDS);

EID: 0033907433     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00966-0     Document Type: Article

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