Annealing induced interdiffusion and crystallization in sputtered amorphous Si/Ge multilayers

Journal of Materials Research

Volumn 12, Issue 9, 1997, Pages 2255-2261

  Czigany Zs ^a   Radnoczi G ^a   Jarrendahl K ^b   Sundgren, J E ^b  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; AMORPHOUS SILICON; ANNEALING; CRYSTALLIZATION; INTERDIFFUSION (SOLIDS); INTERFACES (MATERIALS); MAGNETRON SPUTTERING; NUCLEATION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SILICON ALLOYS; TRANSMISSION ELECTRON MICROSCOPY;

KIRKENDALL VOIDS;

MULTILAYERS;

EID: 0031237629     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1997.0301     Document Type: Article

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