ZnO-GaN tunnel junction for transparent ohmic contacts to p-GaN

Journal of Alloys and Compounds

Volumn 371, Issue 1-2, 2004, Pages 129-132

  Kaminska, E ^a   Piotrowska, A ^a   Golaszewska, K ^a   Kruszka, R ^a   Kuchuk, A ^a   Szade, J ^b   Winiarski, A ^b   Jasinski, J ^c   Liliental Weber, Z ^c  

^a Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

^b UNIVERSITY OF SILESIA   (Poland)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Photoelectron spectroscopies; Scanning and transmission microscopy; Semiconductors; Surfaces and interfaces

Indexed keywords

ELECTRONIC PROPERTIES; GALLIUM NITRIDE; INTERFACES (MATERIALS); NUCLEATION; OHMIC CONTACTS; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

CONTACT PROPERTIES; SHORT WAVELENGTH OPTOELECTRONICS;

TUNNEL JUNCTIONS;

EID: 2342561041     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2003.06.014     Document Type: Conference Paper

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