Synthesis and electrical characterization of n -type carbon nanowalls

Journal of Applied Physics

Volumn 106, Issue 8, 2009, Pages

  Teii, Kungen ^a   Shimada, Shozaburo ^a   Nakashima, Masahiro ^a   Chuang, Alfred T H ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOWALLS; CATALYST-FREE GROWTH; CLUSTER SIZES; CRYSTALLINITIES; DEFECT STATE; DELOCALIZATIONS; DEPOSITION TEMPERATURES; DIAMOND POWDERS; ELECTRICAL CHARACTERIZATION; GASPHASE; HIGH CONDUCTIVITY; HIGH RATE; HIGH-T; LOW CONDUCTIVITY; MICROWAVE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION; N-TYPE CONDUCTION; NANOCRYSTALLINE DIAMOND FILMS; NANOWALLS; SEEBECK EFFECT MEASUREMENTS; SUBSTRATE PRETREATMENT; SURFACE CONDITIONS; THERMAL ACTIVATION;

ACETYLENE; ARRHENIUS PLOTS; COMPOSITE FILMS; DIAMOND FILMS; LIGHTING; METHANE; MICROWAVES; PLASMA DEPOSITION; SEMICONDUCTOR GROWTH;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 70350723499     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3238276     Document Type: Article

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