Origin of reverse leakage current in n-type nanocrystalline diamond/p-type silicon heterojunction diodes

Applied Physics Letters

Volumn 94, Issue 7, 2009, Pages

  Ikeda, Tomohiro ^a   Teii, Kungen ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; LEAKAGE CURRENTS; NANOCRYSTALLINE SILICON; SEMICONDUCTOR DIODES; SILICON WAFERS;

CURRENT INJECTIONS; DEFECT BANDS; DELOCALIZATION; DIELECTRIC BARRIERS; FILM CONDUCTIVITIES; HETEROJUNCTION DIODES; LOW LOSS; MINORITY CARRIERS; NANO DIAMONDS; NANO-CRYSTALLINE; P-TYPE SILICON WAFERS; REVERSE LEAKAGE CURRENTS; SILICON HETEROJUNCTIONS; SIMULTANEOUS REDUCTIONS; TURN-ON VOLTAGES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 60749119255     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3082045     Document Type: Article

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