A novel diode structure with controlled injection of backside holes (CIBH)

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn 2006, Issue , 2006, Pages

  Chen, Min ^a   Lutz, Josef ^a   Domeij, Martin ^b   Felsl, Hans Peter ^c   Schulze, Hans Joachim ^c  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSIDE HOLES (CIBH); CIBH DIODE; DYNAMIC RUGGEDNESS;

CATHODES; COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC CURRENT CONTROL; ELECTRIC FIELD EFFECTS; HOLE CONCENTRATION; SEMICONDUCTOR JUNCTIONS;

SEMICONDUCTOR DIODES;

EID: 34247511680     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. M.Domeij, J.Lutz, and D.Silber, "On the Destruction Limit of Si Power Diodes During Reverse Recovery With Dynamic Avalanche", IEEE Transactions an Electron Devices, Val. 50, Na.2, Feb. 2003, pp. 486-493.
2. T. Laska, L.Lorenz and A.Mauder "The Field Stop IGBT Concept with an Optimized Diode", Proceedings PCIM, 2000
3. J.Lutz, U.Scheuermann: "Advantages of the New Controlled Axial Lifetime Diode", PCIM Proceedings 1994
4. M.Chen, J.Lutz, H.P.Felsl and H.-J.Schulze "Solutions for improved dynamic ruggedness of high voltage freewheeling diodes" PCIM CHINA Proceedings (2006)
5. B.Heinze, H.P.Felsl, A. Mauder, H.-J.Schulze and J.Lutz, "Influence of Buffer Structures on Static and Dynamic Ruggedness of High Voltage FWDs", Proc. ISPSD 2005, p215-218. Santa Barbara, USA May 2005
6. A. Kopta, M. Rahimo, "The Field Charge Extraction (FCE) Diode - A Novel Technology for Soft Recovery High Voltage Diodes", Proc. ISPSD 2005, p83-86, Santa Barbara, USA May 2005.
7. H. Egawa, "Avalanche Characteristics and Failure Mechanism of High Voltage Diodes" IEEE Transaction on Electron Devices, Vol. 13, No. 11, November 1966