The CIBH diode - Great improvement for ruggedness and softness of high voltage diodes

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2008, Pages 173-176

  Felsl, H P ^a   Pfaffenlehner, M ^b   Schulze, H ^a   Biermann, J ^a   Gutt, Th ^a   Schulze, H J ^a   Chen, M ^c   Lutz, J ^c  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^c CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; ELECTRIC CONDUCTIVITY; PHOSPHORUS; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES;

INTERNATIONAL SYMPOSIUM; P-DOPED LAYERS; POWER SEMICONDUCTOR DEVICES;

SEMICONDUCTOR DEVICES;

EID: 49249094678     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2008.4538926     Document Type: Conference Paper

References (4)

1. M.Chen, J.Lutz, M.Domeij, H.P.Felsl, H.-J. Schulze, "A Novel Diode Structure with Controlled Injection of Backside Holes (CIBH)", ISPSD'06, Conference Proceedings pp. 45-48.
2. H. Egawa, "Avalanche Characteristics and Failure Mechanism of High Voltage Diodes" IEEE Transaction on Electron Devices, Vol. 13, No. 11, November 1966
3. M.Domeij, J.Lutz, D.Silber, "On the Destruction Limit of Si Power Diodes During Reverse Recovery with Dynamic Avalanche, IEEE Trans. El. Dev., vol. 50 no. 2, 2003, pp.486-493.
4. ISE User manual, SYNOPSYS INC.