Influence of buffer structures on static and dynamic ruggedness of high voltage FWDs

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2005, Pages 215-218

  Heinze, B ^a   Felsl, H P ^a   Mauder, A ^b   Schulze, H J ^b   Lutz, J ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; BUFFER CIRCUITS; COMPUTER SIMULATION; SEMICONDUCTOR DOPING;

BUFFER DOPING; BUFFER STRUCTURES; FREE WHEELING DIODES (FWD); NUMERICAL DEVICE SIMULATION;

SEMICONDUCTOR DIODES;

EID: 27744467818     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. H. Egawa, "Avalanche characteristics and failure mechanism of high voltage diodes", IEEE Transaction on Electron Devices, Vol. 13 No. 11, Nov. 1966, pp. 754-758
2. H.P.Felsl, E.Falck, M.Pfaffenlehner, J.Lutz, "The influence of bulk parameters on the switching behavior of FWDs for traction application", Proceedings of MIEL, Mai 2004, Nis Serbia, pp. 153-156
3. H.P.Felsl, B.Heinze and J.Lutz, "Avalanche and post avalanche behavior of high voltage diodes", Proceedings of ISPS, 31.Aug.-3.Sept. 2004, Prag, Czech Republic, pp.83-88
4. P. L. Hower, V. G. K. Reddi, "Avalanche injection and second breakdown in transistors", IEEE Transaction on Electron Devices, Vol. 17 No. 4, April 1970, pp. 320-335
5. M. Rahimo, A. Kopta, S. Eicher, U. Schlappbach, S. Linder, "Switching-Self-Clamping-Mode 'SSCM', a breakthrough in SOA performance for high voltage IGBTs and diodes", Proceedings of 2004 ISPSD, 2004. pp. 437-440