Formation of deep periodic trenches in photo-electrochemical etching of n-type silicon

Journal of Micromechanics and Microengineering

Volumn 19, Issue 9, 2009, Pages

  Astrova, E V ^a   Fedulova, G V ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE DISTANCE; DESIGN RULES; EXPERIMENTAL DATA; MACROPORES; N TYPE SILICON; PHOTO-ELECTROCHEMICAL ETCHING; SAMPLE SURFACE; SELF-ORGANIZED; SI(1 0 0); V-SHAPED GROOVES;

PERIODIC STRUCTURES;

ELECTROCHEMICAL ETCHING;

EID: 70350680864     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/19/9/095009     Document Type: Article

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