Photo-electrochemical etching of macro-pores in silicon with grooves as etch seeds

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 6, 2009, Pages 1235-1239

  Astrova, E V ^a   Nechitailov, A A ^a   Tolmachev, V A ^a   Melnikov, V A ^b   Perova, T S ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b TRINITY COLLEGE DUBLIN   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE DISTANCE; FOURIER; INFRARED REFLECTIONS; MACROPORES; MICRO SPECTROSCOPY; ONE DIMENSIONAL PHOTONIC CRYSTAL; OPTIMAL VALUES; PHOTO-ELECTROCHEMICAL ETCHING; REFLECTANCE SPECTRUM; SELF-ORGANIZATION PROCESS; SILICON BASED PHOTONICS; SPECTRAL RANGE; SURFACE GROOVES;

CRYSTAL STRUCTURE; ETCHING; INFRARED SPECTROSCOPY; NUCLEATION; OPTICAL PROPERTIES; PHOTONIC BAND GAP; PHOTONIC CRYSTALS;

TRANSFER MATRIX METHOD;

EID: 67649981418     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200881101     Document Type: Article

References (7)

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