Deep trench etching in macroporous silicon

Applied Physics A: Materials Science and Processing

Volumn 84, Issue 3, 2006, Pages 237-242

  Geppert, T ^a,b   Schweizer, S L ^b   Gosele U ^a   Wehrspohn, R B ^b  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b UNIVERSITY OF PADERBORN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTROCHEMISTRY; ELECTROSTATICS; ETCHING; IN SITU PROCESSING; MATHEMATICAL MODELS; MICROMETERS; PHOTONS;

ELECTROSTATIC MODELS; MACROPOROUS SILICON; N-TYPE SILICON; TIME TRENCHES;

POROUS SILICON;

EID: 33745141932     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-006-3628-7     Document Type: Article

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