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Journal of Physics Condensed Matter

Volumn 14, Issue 10, 2002, Pages 2577-2589

Ab initio theory of native defects in alloys: Application to charged N vacancies in AlxGa1-xN

(5) Ramos, L E a,b Furthmuller J a Bechstedt, F a Scolfaro, L M R b Leite, J R b

a FRIEDRICH SCHILLER UNIVERSITY JENA (Germany)

b UNIVERSITY OF SÃO PAULO (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; COMPOSITION EFFECTS; CRYSTAL ATOMIC STRUCTURE; ELECTRONIC STRUCTURE; MATHEMATICAL MODELS; NUMERICAL ANALYSIS; POINT DEFECTS; POSITIVE IONS; PROBABILITY DENSITY FUNCTION;

ALUMINUM GALLIUM NITRIDE; CLUSTERS; QUASICHEMICAL APPROXIMATION;

ALUMINUM ALLOYS;

EID: 0037128697 PISSN: 09538984 EISSN: None Source Type: Journal
DOI: 10.1088/0953-8984/14/10/309 Document Type: Article

Times cited : (22)

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