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Applied Physics Letters

Volumn 94, Issue 8, 2009, Pages

Optical properties of GaSb/GaAs type-II quantum dots grown by droplet epitaxy

(4) Kawazu, Takuya a Mano, Takaaki a Noda, Takeshi a Sakaki, Hiroyuki a,b

a NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

b TOYOTA TECHNOLOGICAL INSTITUTE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARCHITECTURAL DESIGN; CRYSTAL GROWTH; DROP FORMATION; GALLIUM ALLOYS; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM;

DROPLET EPITAXIES; GAAS; GAAS SUBSTRATES; GASB/GAAS; GRANULAR CRYSTALS; GRANULAR LAYERS; PEAK ENERGIES; PHOTOLUMINESCENCE MEASUREMENTS; PL INTENSITIES; QUANTUM DOTS; STAGGERED ALIGNMENTS; TEMPERATURE DEPENDENCES; WETTING LAYERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 61349181321 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3090033 Document Type: Article

Times cited : (43)

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