Fabrication of In0.15Ga0.85As nanohloes on GaAs by droplet molecular beam epitaxy

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 1843-1846

  Boonpeng, P ^a   Panyakeow, S ^a   Ratanathammaphan, S ^a  

^a CHULALONGKORN UNIVERSITY   (Thailand)

Author keywords

A1. Low dimensional structures; A3. Droplet epitaxy; A3. Molecular beam epitaxy; A3.Nanohole; B1. InGaAs; B1.Semiconducting III V materials

Indexed keywords

COMPUTATIONAL LINGUISTICS; CRYSTAL GROWTH; DROP FORMATION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; OPTICAL WAVEGUIDES; QUANTUM COMPUTERS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES;

A1. LOW DIMENSIONAL STRUCTURES; A3. DROPLET EPITAXY; A3. MOLECULAR BEAM EPITAXY; A3.NANOHOLE; B1. INGAAS; B1.SEMICONDUCTING III-V MATERIALS;

GALLIUM ALLOYS;

EID: 63349093032     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.10.066     Document Type: Article

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