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Volumn , Issue , 2009, Pages

RC variability of short-range interconnects

Author keywords

[No Author keywords available]

Indexed keywords

INTERCONNECT VARIABILITIES; LINE EDGE ROUGHNESS; RC DELAY; ROADMAP; SIZE DEPENDENT; STANDARD CELL; STATISTICAL MODELS; TECHNOLOGY NODES; TOTAL RESISTANCE;

EID: 70350583210     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWCE.2009.5091143     Document Type: Conference Paper
Times cited : (10)

References (12)
  • 1
    • 30344447576 scopus 로고    scopus 로고
    • Integrating intrinsic parameter fluctuation description into BSIMSOI to forecast sub-15 nm UTB SOI based 6T SRAM operation
    • K. Samsudin, B. Cheng, A. R. Brown, S. Roy, A. Asenov, Integrating intrinsic parameter fluctuation description into BSIMSOI to forecast sub-15 nm UTB SOI based 6T SRAM operation, Solid State Electron. 50, 86 (2006).
    • (2006) Solid State Electron , vol.50 , pp. 86
    • Samsudin, K.1    Cheng, B.2    Brown, A.R.3    Roy, S.4    Asenov, A.5
  • 2
    • 0042850597 scopus 로고    scopus 로고
    • Interconnect opportunities for gigascale integration
    • J. D. Meindl, Interconnect opportunities for gigascale integration, IEEE Micro 23 (3), 28-35 (2003).
    • (2003) IEEE Micro , vol.23 , Issue.3 , pp. 28-35
    • Meindl, J.D.1
  • 3
    • 0001013074 scopus 로고    scopus 로고
    • Nanometer-scale linewidth fluctuations caused by polymer aggregates in resist films
    • T. Yamaguchi, H. Namatsu, M. Nagase, K. Yamazaki, K. Kurihara, Nanometer-scale linewidth fluctuations caused by polymer aggregates in resist films, Appl. Phys. Lett. 71(16), 2388-2390 (1997).
    • (1997) Appl. Phys. Lett , vol.71 , Issue.16 , pp. 2388-2390
    • Yamaguchi, T.1    Namatsu, H.2    Nagase, M.3    Yamazaki, K.4    Kurihara, K.5
  • 7
    • 0042532317 scopus 로고    scopus 로고
    • Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness
    • A. Asenov, S. Kaya, A. R. Brown, Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness, IEEE Tran. Electron. Dev. 50 (5), 1254-1260 (2003).
    • (2003) IEEE Tran. Electron. Dev , vol.50 , Issue.5 , pp. 1254-1260
    • Asenov, A.1    Kaya, S.2    Brown, A.R.3
  • 8
    • 70350609382 scopus 로고    scopus 로고
    • Synopsys Raphael-NXT version A-2007.09, Raphael RC3 version A-2008.06, Synopsys, Inc. 700 East Middlefield Road, Mountain View, California CA 94043, USA.
    • Synopsys Raphael-NXT version A-2007.09, Raphael RC3 version A-2008.06, Synopsys, Inc. 700 East Middlefield Road, Mountain View, California CA 94043, USA.
  • 9
    • 33745819983 scopus 로고    scopus 로고
    • Size dependant resistivity of nanometric copper wires
    • H. Marom, J. Mullin and M. Eizenberg, Size dependant resistivity of nanometric copper wires, Phys. Rev. B 74, 045411 (2006).
    • (2006) Phys. Rev. B , vol.74 , pp. 045411
    • Marom, H.1    Mullin, J.2    Eizenberg, M.3
  • 10
    • 4544364454 scopus 로고
    • Resistivity and temperature coefficient of thin metal films with rough surface
    • Y. Nambda, Resistivity and temperature coefficient of thin metal films with rough surface, Japan J. Appl. Phys. 9, 1326 (1970).
    • (1970) Japan J. Appl. Phys , vol.9 , pp. 1326
    • Nambda, Y.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.