Structural and electrical evaluation for strained Si/SiGe on insulator

Thin Solid Films

Volumn 508, Issue 1-2, 2006, Pages 107-111

  Wang, Dong ^a   Ii, Seiichiro ^a   Ikeda, Ken ichi ^a   Nakashima, Hideharu ^a   Ninomiya, Masaharu ^b   Nakamae, Masahiko ^b   Nakashima, Hiroshi ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b SUMCO CORPORATION   (Japan)

Author keywords

Dislocation; Dual MOS DLTS; Interface; TEM

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; DISLOCATIONS (CRYSTALS); SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

BURIED OXIDE (BOX); DISLOCATION; DUAL-MOS DLTS; INTERFACES; THREADING DISLOCATIONS;

INTERFACES (MATERIALS);

EID: 33646106571     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.07.338     Document Type: Article

References (9)

1. Tezuka T., Sugiyama N., and Takagi S. Appl. Phys. Lett. 79 (2001) 1798
2. Tezuka T., Sugiyama N., Mizuno T., Suzuki M., and Takagi S. Jpn. J. Appl. Phys. 40 (2001) 2866
3. Nakashima H., Wang D., Noguchi T., Itani K., Wang J., and Zhao L. Jpn. J. Appl. Phys. 43 (2004) 2402
4. Schroder D.K. Semiconductor Material and Device Characterization. 2nd ed. (1998), John Wiley and Sons, New York 272
5. LeGoues F.K., Rosenberg R., Nguyen T., Himpsel F., and Meyerson B.S. J. Appl. Phys. 65 (1988) 1724
6. Marstein E.S., Gunnæs A.E., Olsen A., Finstad T.G., Turan R., and Serincan U. J. Appl. Phys. 96 (2004) 4308
7. Ahn C.G., Kang H.S., Kwon Y.K., Lee S.M., Ryum B.R., and Kang B.K. J. Appl. Phys. 86 (1999) 1542
8. Nayak D.K., Park J.S., Woo J.C.S., Wang K.L., and Ivanov I.C. J. Appl. Phys. 76 (1994) 982
9. Suzuki T. Dynamics of Dislocation and Plasticity, Shokabo (1975) 122-124 (in Japanese)