Composition optimization and phase transformation of Si-nanocrystal- dopedx for enhancing luminescence from MOSLED

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 15, Issue 5, 2009, Pages 1387-1392

  Pai, Yi Hao ^a   Chang, Chung Hsiang ^a   Lin, Gong Ru ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Crystallinity; Electroluminescence (EL); Fourier transform infrared spectrometer (FTIR); High resolution transmission electron microscopy (HRTEM); MOSLED; Oxygen composition ratio; Photoluminescence (PL); Plasma enhanced chemical vapor deposition (PECVD)

Indexed keywords

CRYSTALLINITY; FOURIER TRANSFORM INFRARED SPECTROMETER (FTIR); HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM); MOSLED; PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD);

CONVERSION EFFICIENCY; DEGRADATION; ELECTROLUMINESCENCE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INFRARED SPECTROMETERS; ISOMERS; LIGHT; LIGHT EMISSION; MATHEMATICAL TRANSFORMATIONS; NANOCRYSTALS; OXYGEN; PHOTODEGRADATION; PHOTOLUMINESCENCE; PLASMA DEPOSITION; PLASMAS; SILICON; SILICON COMPOUNDS; SPECTROMETRY; VAPORS; X RAY PHOTOELECTRON SPECTROSCOPY;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 70350161504     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2009.2020332     Document Type: Conference Paper

References (21)

1. 2 ," J. Appl. Phys., vol.97, pp. 094306-1- 094306-8, 2005.
2. G.-R. Lin, Y. H. Pai, and C. T. Lin, "Microwatt MOSLED using SiOx with buried Si nanocrystals on Si nano-pillar array," J. Lightw. Technol., vol.26, pp. 1486-1491, 2008.
3. X. W. Zhang, "Microstructural modification of nc-Si/SiOx films during plasma-enhanced chemical vapor deposition," Phys. Status Solidi A Appl. Mater., vol.202, pp. 1773-1777, 2005.
4. C. Y. Lin, Y. K. Fang, S. F. Chen, C. S. Lin, T. H. Chou, S. B. Hwang, J. S. Hwang, and K. I. Lin, "Investigation of structure and properties of nanocrystalline silicon on various buffer layers," J. Electro. Mater., vol.34, pp. 1123-1128, 2005.
5. 2 matrix," Appl. Phys. Lett., vol.81, pp. 4174- 4176, 2002.
6. D. B. Williams and C. B. Carter, Transmission Electron Microscopy. New York: Plenum, 1996, pp. 13-20.
7. T. Zhang, J. Gao, H. P. Zhang, L. C. Yang, Y. P.Wu, and H. Q.Wu, "Preparation and electrochemical properties of core-shell Si/SiO nanocomposite as anode material for lithium ion batteries," Electrochem. Commun., vol.9, pp. 886-890, 2007.
8. D. V. Ragone, Thermodynamics of Materials. New York: Wiley, 1995, pp. 199-243.
9. 2 ," Appl. Phys. Lett., vol.82, pp. 1595-1597, 2003.
10. C. Delerue, G. Allan, and M. Lannoo, "Theoretical aspects of the luminescence of porous silicon," Phys. Rev. B, vol.48, pp. 11024-11036, 1993.
11. K. J. Kim, J. W. Kim, M.-S. Yang, and J. H. Shin, "Oxidation of Si during the growth of SiOx by ion-beam sputter deposition: In situ x-ray photoelectron spectroscopy as a function of oxygen partial pressure and deposition temperature," Phys. Rev. B, vol.74, p.153305, 2006.
12. 2 interfaces," Appl. Phys. lett., vol.91, pp. 103113-1-103113-3, 2007.
13. P. Gonzalez, D. Fernandez, J. Pou, E. Garcia, J. Serra, B. Leon, M. Perez- Amor, and T. Szorenyi, "Study of the gas-phase parameters affecting the silicon-oxide film deposition induced by an ArF laser," Appl. Phys. A, vol.57, pp. 181-185, 1993.
14. 2 multilayers," J. Appl. Phys., vol.100, p.123504, 2006.
15. F. Ay and A. Aydinli, "Comparative investigation of hydrogen bonding in silicon based PECVD grown dielectrics for optical waveguides," Opt. Mater., vol.26, pp. 33-46, 2004.
16. 2 ," Thin Solid Films, vol.375, pp. 137-141, 2000.
17. X. Zhao, O. Schoenfeld, J. Kusano, Y. Aoyagi, and T. Sugano, "Observation of direct transitions in silicon nanocrystallites," Jpn. J. Appl. Phys., vol.33, pp. L899-L901, 1994.
18. H. S. Bae, T. G. Kim, C. N. Whang, S. Im, J. S. Yun, and J. H. Song, "Electroluminescence mechanism in SiOx layers containing radiative centers," J. Appl. Phys., vol.91, pp. 4078-4081, 2002.
19. 2 films," J. Appl. Phys., vol.78, pp. 842-846, 1995.
20. R. Tohmon, Y. Shimogaichi, H. Mizuno, Y. Ohki, K. Nagasawa, and Y. Hama, "2.7-eV luminescence in as-manufactured high-purity silica glass," Phys. Rev. Lett., vol.62, pp. 1388-1391, 1989.
21. H. Nishikawa, R. E. Stahlbush, and J.H. Stathis, "Oxygen-deficient centers and excess Si in buried oxide using photoluminescence spectroscopy," Phys. Rev. B, vol.60, pp. 15910-15918, 1999.