Investigation of structure and properties of nanocrystalline silicon on various buffer layers

Journal of Electronic Materials

Volumn 34, Issue 8, 2005, Pages 1123-1128

  Lin, C Y ^a   Fang, Y K ^a   Chen, S F ^a   Lin, C S ^a   Chou, T H ^a   Hwang, S B ^b   Hwang, J S ^a   Lin, K I ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b Cheinkuo Technology University   (Taiwan)

Author keywords

Buffer layer; Columnar grain (CG); Hot wire chemical vapor deposition (CVD); Nanocrystalline silicon

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; HALL EFFECT; NANOSTRUCTURED MATERIALS; RAMAN SCATTERING; SCANNING ELECTRON MICROSCOPY; SURFACE ROUGHNESS; VOLUME FRACTION; X RAY DIFFRACTION;

BUFFER LAYERS; COLUMNAR GRAIN (CG); HOT-WIRE CHEMICAL VAPOR DEPOSITION (CVD); NANOCRYSTALLINE SILICON;

SILICON;

EID: 24144474673     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0240-0     Document Type: Article

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