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Volumn 2, Issue 7, 2005, Pages 2195-2198

Layer quality and 2DEG behavior in AlGaN/GaN HEMTs grown by molecular beam epitaxy

b LUMILOG (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; ELECTRON MOBILITY; GALLIUM NITRIDE; INTERCALATION COMPOUNDS; MOLECULAR BEAM EPITAXY; SAPPHIRE; SILICON CARBIDE;

AMMONIA SOURCE; BUFFER LAYERS; GAN TEMPLATE;

ALUMINUM COMPOUNDS;

EID: 27344437637 PISSN: 16101634 EISSN: None Source Type: Conference Proceeding
DOI: 10.1002/pssc.200461469 Document Type: Conference Paper

Times cited : (2)

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