Implantation and activation of high concentrations of boron in germanium

IEEE Transactions on Electron Devices

Volumn 52, Issue 11, 2005, Pages 2416-2421

  Suh, Yong Seok ^a   Carroll, Malcolm S ^b   Levy, Roland A ^a   Bisognin, Gabriele ^c   De Salvador, D ^c   Sahiner, M Alper ^d,e   King, Clifford A ^f  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c UNIVERSITY OF PADOVA   (Italy)

^d Evans East   (United States)

^e SETON HALL UNIVERSITY   (United States)

^f Noble Device Technologies   (United States)

Author keywords

Annealing; Boron; Germanium; Ion implantation

Indexed keywords

ANNEALING; COMPUTER SIMULATION; DIFFUSION IN SOLIDS; ELECTRIC CONDUCTIVITY; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DEVICE MANUFACTURE; X RAY DIFFRACTION;

DOPANT ACTIVATION; HIGH RESOLUTION X RAY DIFFRACTION (HRXRD); NUCLEAR REACTION ANALYSIS (NRA); SPREADING RESISTANCE PROFILING (SRP);

MOSFET DEVICES;

EID: 27744603168     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.857183     Document Type: Article

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