Structure and ferroelectric properties of bi0.95la 0.05feo3 film on indium tin oxide (ito)/glass substrate

Surface Review and Letters

Volumn 16, Issue 4, 2009, Pages 503-506

  Gao, Qiang ^a   Zheng, Wei ^a  

^a JILIN UNIVERSITY   (China)

Author keywords

(ITO) Glass substrate; Bi0.95La0.05FeO3 film; Ferroelectric

Indexed keywords

(ITO)/GLASS SUBSTRATE; BI0.95LA0.05FEO3 FILM; DOMINANT FACTOR; FERROELECTRIC; FERROELECTRIC PROPERTY; GLASS SUBSTRATES; INDIUM TIN OXIDE; LOW-LEAKAGE CURRENT; METALORGANIC DECOMPOSITION METHOD; P-E HYSTERESIS LOOPS; PREFERRED ORIENTATIONS; REMANENT POLARIZATION; SECONDARY PHASE;

DECOMPOSITION; FERROELECTRICITY; GLASS; HYSTERESIS; HYSTERESIS LOOPS; IRON OXIDES; LANTHANUM; LEAKAGE (FLUID); LEAKAGE CURRENTS; ORGANOMETALLICS; OXYGEN; OXYGEN VACANCIES; SUBSTRATES; TIN;

INDIUM;

EID: 70349917654     PISSN: 0218625X     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0218625X09013037     Document Type: Article

References (23)

1. J.Wang, J. B. Neaton, H. Zheng et al., Science 299 (2003) 1718.
2. P. Fischer, M. Polomska, I. Sosnowska et al., J. Phys. C 13 (1980) 1931.
3. R. Seshadri and A. Nicola, Chem. Mater. 13 (2001) 2892.
4. J. Li, J. Wang, M. Wuttig, R. Ramesh et al., Appl. Phys. Lett. 84 (2004) 5261.
5. S. Y. Yang, F. Zavaliche, L. Mohaddes-Ardabili et al., Appl. Phys. Lett. 87 (2005) 102903.
6. R. R. Das, D. M. Kim, S. H. Baek et al., Appl. Phys. Lett. 88 (2006) 242904.
7. G. D. Hu, X. Cheng, W. B. Wu et al., Appl. Phys. Lett. 91 (2007) 232909.
8. H. Uchida, R. Ueno, H. Funakubo et al., J. Appl. Phys. 100 (2006) 014106.
9. Y. H. Lin, Q. H. Jiang, Y. Wang et al., Appl. Phys. Lett. 90 (2007) 172507.
10. Z. V. Gabbasova, M. D. Kuz'min, A. K. Zvezdin et al., Phys. Lett. A 158 (1991) 491.
11. V. A. Murashiov, D. N. Rakov, V. M. Ionov et al., Ferroelectrics 162 (1994) 11.
12. A. M. Kadomtseva, Y. F. Popov, T. V. Schogoleva et al., Ferroelectrics 169 (1995) 85.
13. J. Yan, G. D. Hu, X. M. Chen et al., J. Appl. Phys. 104 (2008) 076103.
14. JCPDS Card No. 86-1518.
15. G. L. Yuan, S. W. Or, J. M. Liu et al., Appl. Phys. Lett. 89 (2006) 052905.
16. G. D. Hu, S. H. Fan, C. H. Yang et al., Appl. Phys. Lett. 92 (2008) 192905.
17. J. Yan, G. D. Hu, Z. M. Liu et al., J. Appl. Phys. 103 (2008) 056109.
18. G. D. Hu, J. B. Xu, I. H. Wilson et al., Appl. Phys. Lett. 74 (1999) 3711.
19. H. N. Lee, D. Hesse, N. Zakharov et al., Science 296 (2002) 2006.
20. F. M. Bai, J. L. Wang, M. Wuttig et al., Appl. Phys. Lett. 86 (2005) 032511.
21. J. Dho, X. Qi, H. Kim et al., Adv. Mater. 18 (2006) 1445.
22. X. Qi, M. Wei, Y. Lin et al., Appl. Phys. Lett. 86 (2005) 071913.
23. K. Abe, N. Yanase, T. Yasumoto et al., Jpn. J. Appl. Phys. Part 1 41 (2002) 6065.