Erratum to "Raman spectroscopy of Si1-xGex epilayers" [Mater. Sci. Eng. B 124-125 (2005) 127-131] (DOI:10.1016/j.mseb.2005.08.057);Raman spectroscopy of Si1-xGex epilayers

Materials Science and Engineering: B

Volumn 124-125, Issue SUPPL., 2005, Pages 127-131

  Pezzoli, F ^a   Martinelli, Lucio ^a,d   Grilli, E ^a   Guzzi, M ^a   Sanguinetti, S ^a   Bollani, M ^a   Chrastina, H D ^b   Isella, G ^b   Von Kanel H ^b   Wintersberger, E ^c   Stangl, J ^c   Bauer, G ^c  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b POLITECNICO DI MILANO   (Italy)

^c JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^d LABORATOIRE DE PHYSIQUE DE LA MATIÈRE CONDENSÉE   (France)

Author keywords

Raman spectroscopy; Si1 xGex epilayers; Vibrational properties

Indexed keywords

COMPOSITION; ELASTICITY; EPITAXIAL GROWTH; MOLECULAR VIBRATIONS; SILICON ALLOYS; STRAIN RATE;

ALLOY GROWTH; ELASTIC PARAMETERS; SI1-XGEX EPILAYERS; VIBRATIONAL PROPERTIES;

RAMAN SPECTROSCOPY;

EID: 27844521769     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2006.02.057     Document Type: Erratum

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