SCOPUS 정보 검색 플랫폼

Volumn 92, Issue 26, 2008, Pages

GaN for x-ray detection

(7) Duboz, Jean Yves a Laügt, Marguerite a Schenk, David a Beaumont, Bernard b Reverchon, Jean Luc c Wieck, Andreas D d Zimmerling, Tino d

a CRHEA CNRS (France)

b LUMILOG (France)

c THALES RESEARCH AND TECHNOLOGY (France)

d RUHR UNIVERSITY BOCHUM (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; DETECTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; METALS; MIXING; OPTICAL DESIGN; OPTOELECTRONIC DEVICES; PHOTOCONDUCTIVITY; PHOTODETECTORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM;

AB SORPTION COEFFICIENTS; AMERICAN INSTITUTE OF PHYSICS (AIP); DETECTOR GEOMETRY; METAL-SEMICONDUCTOR-METAL PHOTODETECTORS (MSM-PDS); PHOTOCONDUCTIVE GAINS; PHOTON ENERGIES; PHOTOVOLTAIC (PV); RESPONSE TIME; RESPONSIVITY; TEMPORAL DYNAMICS; X-RAY DETECTIONS;

ELECTRIC CONDUCTIVITY;

EID: 46649094409 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2951619 Document Type: Article

Times cited : (39)

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