Modeling direct modulation dynamics in silicon nanocrystal light emitting transistors

2008 5th International Conference on Group IV Photonics, GFP

Volumn , Issue , 2008, Pages 326-328

  Carreras, Josep ^a   Garrido, B ^a  

^a UNIVERSITY OF BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; CHARGE DENSITY; ELECTROLUMINESCENCE; LIGHT; LIGHT EMISSION; LUMINESCENCE; MODULATION; NANOCLUSTERS; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; NANOSTRUCTURES; OPTICAL WAVEGUIDES; PHOTOTRANSISTORS; SILICON; SILICON COMPOUNDS; SINGLE CRYSTALS; TRANSISTORS;

ABSORPTION CROSS SECTIONS; DIRECT MODULATIONS; ELECTRICAL INJECTIONS; GATE OXIDES; MAIN FREQUENCIES; MODULATION SPEEDS; PHYSICAL MECHANISMS; RATE EQUATIONS; RISE TIMES; SILICON NANOCRYSTAL LAYERS; SILICON NANOCRYSTALS;

FIELD EFFECT TRANSISTORS;

EID: 56249133000     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/GROUP4.2008.4638188     Document Type: Conference Paper

References (10)

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