The fabrication of high-aspect-ratio, size-tunable nanopore arrays by modified nanosphere lithography

Nanotechnology

Volumn 20, Issue 42, 2009, Pages

  Chen, X ^a   Wei, X ^a   Jiang, K ^a  

^a UNIVERSITY OF BIRMINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP REACTIVE ION ETCHING; ETCH MASK; HIGH ASPECT RATIO; IN-PLANE; LITHOGRAPHIC PROCESS; NANO SPHERE LITHOGRAPHY; NANOPORE ARRAY; NANOPORE SIZE; OXYGEN ETCHING; SELF-ASSEMBLED BILAYERS;

NANOPORES; NANOSPHERES; OXYGEN; PRESSURE DROP; REACTIVE ION ETCHING;

ASPECT RATIO;

NANOMATERIAL; NANOPARTICLE; NANOSPHERE; OXYGEN; SILICON;

ARTICLE; HYDROPHILICITY; NANOFABRICATION; NANOPORE; PRIORITY JOURNAL; SCANNING ELECTRON MICROSCOPY; TEMPERATURE SENSITIVITY; CHEMISTRY; INSTRUMENTATION; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; ULTRASTRUCTURE;

MICROSCOPY, ELECTRON, SCANNING; NANOSPHERES; NANOTECHNOLOGY; OXYGEN; PARTICLE SIZE; SILICON;

EID: 70349665392     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/42/425605     Document Type: Article

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