Contactless electroreflectance of GaN bulk crystals grown by ammonothermal method and GaN epilayers grown on these crystals

Applied Physics Letters

Volumn 93, Issue 6, 2008, Pages

  Kudrawiec, R ^a   Misiewicz, J ^a   Rudzinski M ^b   Zajc M ^b  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b AMMONO Sp Zoo   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; CRYSTALLOGRAPHY; CRYSTALS; EPILAYERS; EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; POWDERS; RESONANCE; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

AMMONOTHERMAL; AMMONOTHERMAL METHOD; BAND BENDING; BAND BENDINGS; BULK CRYSTALS; CONTACTLESS ELECTROREFLECTANCE; ENERGY GAPS; GAN CRYSTALS; GAN EPILAYERS; GAN SUBSTRATES; HIGH-QUALITY; HOMOEPITAXY; METAL-ORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL QUALITIES; ROOM TEMPERATURES; SEMI-INSULATING GAN; TWO TYPES;

GALLIUM ALLOYS;

EID: 49749101272     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2972030     Document Type: Article

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