Raman and photoluminescence characterisation of InxGa1-xP self-assembled quantum dots on GaP(100) substrate

Materials Science and Engineering C

Volumn 23, Issue 6-8, 2003, Pages 1115-1121

  Ingale, Alka ^a   Datta, S ^b   Bhattacharya, A ^b   Ghokale, M R ^b   Arora, B M ^b  

^a RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY   (India)

^b TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

Author keywords

Confined phonons; Phonons in alloys; Photoluminescence; Quantum dots; Raman scattering

Indexed keywords

OSCILLATORS (ELECTRONIC); PHONONS; PHOTOLUMINESCENCE; QUENCHING; RAMAN SCATTERING; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS; WETTING;

BUFFER LAYERS; NONRADIATIVE TRANSITIONS;

SEMICONDUCTOR QUANTUM DOTS;

SPECTROSCOPY;

EID: 0344256464     PISSN: 09284931     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msec.2003.09.079     Document Type: Article

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