Self-assembled InP islands grown on GaP substrate

Journal of Crystal Growth

Volumn 193, Issue 4, 1998, Pages 470-477

  Nabetani, Y ^a,b   Sawada, K ^a   Furukawa, Y ^a   Wakahara, A ^a,c   Noda, S ^a   Sasaki, A ^a,d  

^a KYOTO UNIVERSITY   (Japan)

^b UNIVERSITY OF YAMANASHI   (Japan)

^c TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^d OSAKA ELECTRO COMMUNICATION UNIVERSITY   (Japan)

Author keywords

GaP; InP; Island; Lattice mismatch; Quantum dot

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL LATTICES; DENSITY CONTROL (SPECIFIC GRAVITY); DISLOCATIONS (CRYSTALS); METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM PHOSPHIDE; TERTIARYBUTYLPHOSPHINE;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0032475632     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00545-4     Document Type: Article

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