Growth of direct bandgap GaInP quantum dots on GaP substrates

Journal of Electronic Materials

Volumn 26, Issue 10, 1997, Pages 1199-1204

  Lee, Jong Won ^a   Schremer, Alfred T ^a   Fekete, Dan ^a   Shealy, James R ^a   Ballantyne, Joseph M ^a  

^a Cornell University   (United States)

Author keywords

Epitaxial growth; GaInP; GaP substrates; Metalorganic chemical vapor deposition (MOCVD); Semiconductor quantum dots

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL DEFECTS; CRYSTAL LATTICES; ENERGY GAP; EPITAXIAL GROWTH; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; STRAIN; SUBSTRATES;

LATTICE MISMATCH; STRANSKI KRASTANOV ISLANDS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0031256959     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0020-0     Document Type: Article

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