SCOPUS 정보 검색 플랫폼

Materials Science in Semiconductor Processing

Volumn 4, Issue 6, 2001, Pages 497-501

InP quantum dots in (1 0 0) GaP: Growth and luminescence

(4) Masselink, W T a Hatami, F a Mussler, G a Schrottke, L b

a HUMBOLDT UNIVERSITY (Germany)

b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

Author keywords

GaP; InP; Quantum dot

Indexed keywords

ACTIVATION ENERGY; ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS;

OPTICAL EMISSION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035573490 PISSN: 13698001 EISSN: None Source Type: Journal
DOI: 10.1016/S1369-8001(02)00008-2 Document Type: Conference Paper

Times cited : (8)

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