The thermal effect of GaN Schottky diode on its I-V characteristics

Journal of Crystal Growth

Volumn 268, Issue 3-4 SPEC. ISS., 2004, Pages 607-611

  Chung, S W ^a   Hwang, W J ^a   Lee, Chin C ^b   Shin, M W ^a  

^a Myong Ji University   (South Korea)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

A1. I V curve; A1. Ionization of dopants; A1. Ohmic; B3. Schottky diode

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CRYSTAL GROWTH; CRYSTAL LATTICES; DOPING (ADDITIVES); ELECTRIC CURRENTS; ELECTRIC POTENTIAL; IONIZATION OF SOLIDS; LIGHT EMITTING DIODES; OHMIC CONTACTS; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS; THERMOANALYSIS;

DOPING CONCENTRATIONS; I-V CURVE; IONIZATION OF DOPANTS; SCHOTTKY DIODE;

SCHOTTKY BARRIER DIODES;

EID: 3142710905     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.04.106     Document Type: Conference Paper

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