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Volumn 43, Issue 8, 2007, Pages 480-481

Measured negative differential resistivity for GaN Gunn diodes on GaN substrate

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; ELECTROMIGRATION; SUBSTRATES;

EID: 34247200044     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20070658     Document Type: Article
Times cited : (40)

References (7)
  • 2
    • 0345021762 scopus 로고
    • Monte Carlo calculation of the velocity-field relationship for gallium nitride
    • Littlejohn, M.A., Hauser, J.R., and Glisson, T.H.: 'Monte Carlo calculation of the velocity-field relationship for gallium nitride', Appl. Phys. Lett., 1975, 26, pp. 625-627
    • (1975) Appl. Phys. Lett , vol.26 , pp. 625-627
    • Littlejohn, M.A.1    Hauser, J.R.2    Glisson, T.H.3
  • 3
    • 26444587214 scopus 로고    scopus 로고
    • Terahertz generation in submicron GaN diodes within the limited space-charge accumulation regime
    • to
    • Sokolov, V.N., Kim, K.W., Kochelap, V.A., and Woolard, D.L.: 'Terahertz generation in submicron GaN diodes within the limited space-charge accumulation regime', J. Appl. Phys., 2005, 98, pp. 064507-1 to 064507-7
    • (2005) J. Appl. Phys , vol.98
    • Sokolov, V.N.1    Kim, K.W.2    Kochelap, V.A.3    Woolard, D.L.4
  • 6
    • 20644455339 scopus 로고    scopus 로고
    • Bulk GaN and AlGaN/GaN heterostructure drift velocity measure ments and comparison to theoretical models
    • to
    • Barker, J.M., Ferry, D.K., Koleske, D.D., and Shul, R.J.: 'Bulk GaN and AlGaN/GaN heterostructure drift velocity measure ments and comparison to theoretical models', J. Appl. Phys., 2005, 97, pp. 063705-1 to 063705-5
    • (2005) J. Appl. Phys , vol.97
    • Barker, J.M.1    Ferry, D.K.2    Koleske, D.D.3    Shul, R.J.4
  • 7
    • 34247253822 scopus 로고    scopus 로고
    • http://www.ioffe.rssi.ru/SVA/NSM/Semicond/GaN/highfield.html


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.