Technology aspects of GaN-based diodes for high-field operation

Superlattices and Microstructures

Volumn 40, Issue 4-6 SPEC. ISS., 2006, Pages 363-368

  Mutamba, Kabula ^a   Yilmazoglu, Oktay ^a   Sydlo, Cezary ^a   Mir, Mostafa ^a   Hubbard, Seth ^b   Zhao, G ^b   Daumiller, Ingo ^c   Pavlidis, Dimitris ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF MICHIGAN   (United States)

^c MicroGaN GmbH   (Germany)

Author keywords

Diode; Electromigration; GaN; Gunn effect

Indexed keywords

ELECTRIC FIELDS; ELECTROMIGRATION; ELECTRON TRANSITIONS; GALLIUM NITRIDE; METALLIZING; NEGATIVE RESISTANCE; THRESHOLD VOLTAGE;

GUNN EFFECTS; NEGATIVE DIFFERENTIAL RESISTANCE (NDR); PULSED-BIAS CONDITION;

SEMICONDUCTOR DIODES;

EID: 33845325810     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2006.07.026     Document Type: Article

References (6)

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2. Yilmazoglu O., Pavlidis D., Litvin Yu.M., Hubbard S., Tiginyanu I.M., Mutamba K., and Hartnagel H.L. Field emission from quantum size GaN whiskers. Appl. Surf. Sci. 220 1-4 (2003) 46-50
3. Alekseev E., and Pavlidis D. Large-signal microwave performance of GaN-based NDR diode oscillators. Solid State Electron. 44 (2000) 941-947
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6. J.R. Lloyd, Electromigration for designers: An introduction for the non-specialist. http://www.techonline.com/community/ed_resource/feature_article/20421?pr int, 2002