Thermal-assisted spin transfer torque memory (STT-RAM) cell design exploration

Proceedings of the 2009 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2009

Volumn , Issue , 2009, Pages 217-222

  Li, Hai ^a   Xi, Haiwen ^a   Chen, Yiran ^a   Stricklin, John ^a   Wang, Xiaobin ^a   Zhang, Tong ^b  

^a SEAGATE TECHNOLOGY   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CELL DESIGN; DESIGN SPACES; FINITE ELEMENT SIMULATIONS; MEMORY ELEMENT; NON-VOLATILE MEMORY TECHNOLOGY; PROGRAMMING PROCESS; RANDOM ACCESS MEMORIES; RESISTANCE-AREA PRODUCTS; SPIN TRANSFER TORQUE; SYSTEMATIC ANALYSIS; THERMAL DYNAMICS;

CELL MEMBRANES; SCALABILITY; SPIN DYNAMICS;

RANDOM ACCESS STORAGE;

EID: 70349490239     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISVLSI.2009.17     Document Type: Conference Paper

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