Low-current blocking temperature writing of double-barrier MRAM cells

IEEE Transactions on Magnetics

Volumn 40, Issue 4 II, 2004, Pages 2622-2624

  Wang, Jianguo ^a,b   Freitas, P P ^a,b  

^a INESC   (Portugal)

^b INSTITUTO SUPERIOR TÉCNICO   (Portugal)

Author keywords

Magnetoresistive materials and devices; MRAM; Tunnel junction

Indexed keywords

ANNEALING; ANTIFERROMAGNETIC MATERIALS; DATA STORAGE EQUIPMENT; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRODES; MAGNETIC FIELDS; MAGNETIC HYSTERESIS; MAGNETRON SPUTTERING; OXIDATION; THERMAL EFFECTS;

MAGNETIC RANDOM ACCESS MEMORY (MRAM); MAGNETORESISTIVE MATERIALS AND DEVICES; SHORT CURRENT PULSES; THREE-STATE MEMORY;

RANDOM ACCESS STORAGE;

EID: 4444301072     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2004.834239     Document Type: Article

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