Probing fast heating in magnetic tunnel junction structures with exchange bias

New Journal of Physics

Volumn 10, Issue , 2008, Pages

  Papusoi, C ^a   Sousa, R ^a   Herault, J ^a   Prejbeanu, I L ^a,b   Dieny, B ^a  

^a CEA GRENOBLE   (France)

^b Crocus Technology   (France)

Author keywords

[No Author keywords available]

Indexed keywords

PLASMAS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; TUNNEL JUNCTIONS; TUNNELS; WAVEGUIDE JUNCTIONS;

1D MODELS; CURRENT PERPENDICULAR TO THE PLANES; ELECTRIC CURRENT PULSES; ELECTRIC VOLTAGES; EXCHANGE BIASES; EXPERIMENTAL VALUES; EXPONENTIAL INCREASES; FREE LAYERS; HEAT DIFFUSIONS; HEAT DISSIPATIONS; MAGNETIC TRANSPORTS; MAGNETIC TUNNEL JUNCTIONS; ROOM TEMPERATURES; STEADY TEMPERATURES; THERMODYNAMIC PARAMETERS; TIME CONSTANTS; TRANSIENT TEMPERATURES; TUNNEL BARRIERS;

MAGNETIC DEVICES;

EID: 56349166134     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/10/10/103006     Document Type: Article

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