Time-resolved photoluminescence of type-II InAs/GaAs quantum dots covered by a thin GaAs1-xSbx layer

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue 6, 2009, Pages 1449-1452

  Liao, Yu An ^a   Hsu, Wei Ting ^a   Lee, Ming Chih ^a   Chiu, Pei Chin ^b   Chyi, Jen Inn ^b   Chang, Wen Hao ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; BANDBENDING; DECAY TIME; EXPONENTIAL DECAYS; GAAS; HIGHER TEMPERATURES; INAS; INAS/GAAS QUANTUM DOTS; LOW TEMPERATURES; PEAK SHIFT; RED SHIFT; TEMPERATURE-DEPENDENT MEASUREMENTS; TIME-RESOLVED PHOTOLUMINESCENCE;

GALLIUM ALLOYS; INDIUM ARSENIDE; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 70349419846     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200881512     Document Type: Conference Paper

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