High-temperature thermal stability research on SiC thin films by magnetron sputtering

Cailiao Yanjiu Xuebao/Chinese Journal of Materials Research

Volumn 23, Issue 4, 2009, Pages 410-414

  Zhu, Yuankun ^a   Zhu, Jiaqi ^a   Han, Jiecai ^a   Liang, Jun ^a   Zhang, Yuanchun ^b  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b China Automobile Industry Engineering Cooperation   (China)

Author keywords

High temperature annealing; Inorganic non metallic materials; Magnetron sputtering; SiC films; Thermal stability

Indexed keywords

ANNEALING IN VACUUM; DENSE LAYER; HIGH TEMPERATURE; HIGH-TEMPERATURE ANNEALING; INORGANIC NON-METALLIC MATERIALS; SI SUBSTRATES; SIC FILMS; SIC THIN FILMS; THERMAL STABILITY;

AMORPHOUS SILICON; ANNEALING; ATMOSPHERIC TEMPERATURE; MAGNETRON SPUTTERING; MAGNETRONS; METAL ANALYSIS; MICROCRYSTALLINE SILICON; OXIDE FILMS; OXYGEN; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON CARBIDE; THERMODYNAMIC STABILITY; THIN FILMS; VACUUM;

AMORPHOUS FILMS;

EID: 70349163879     PISSN: 10053093     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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