Annealing effects on the structural, optical and magnetic properties of Mn implanted GaN

Journal of Physics D: Applied Physics

Volumn 42, Issue 13, 2009, Pages

  Majid, Abdul ^a   Sharif, Rehana ^b   Husnain, G ^c   Ali, Akbar ^a  

^a QUAID I AZAM UNIVERSITY   (Pakistan)

^b UNIVERSITY OF ENGINEERING AND TECHNOLOGY   (Pakistan)

^c Peking University   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING EFFECTS; ANNEALING TEMPERATURES; BOUND MAGNETIC POLARONS; DOSE-DEPENDENT; FERROMAGNETIC EXCHANGE; FERROMAGNETIC ORDERINGS; GAN THIN FILMS; HIGH-TEMPERATURE ANNEALING; HOST LATTICE; IMPLANTATION INDUCED DAMAGES; IMPLANTED SAMPLES; MAGNETIC MEASUREMENTS; MN ATOMS; MN IONS; OPTICAL TRANSMISSION MEASUREMENTS; OUT-DIFFUSION; ROOM TEMPERATURE; SATURATION MAGNETIC MOMENTS; URBACH ENERGY; URBACH TAIL; WURTZITE STRUCTURE; X-RAY DIFFRACTION MEASUREMENTS; XPS MEASUREMENTS;

FERROMAGNETIC MATERIALS; FERROMAGNETISM; GALLIUM ALLOYS; GALLIUM NITRIDE; HYSTERESIS; HYSTERESIS LOOPS; LIGHT TRANSMISSION; MAGNETIC MOMENTS; MAGNETIC PROPERTIES; MANGANESE; MANGANESE COMPOUNDS; OPTICAL PROPERTIES; POLARONS; SEMICONDUCTING GALLIUM; ZINC SULFIDE;

ANNEALING;

EID: 70349093176     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/13/135401     Document Type: Article

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