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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 9 A/B, 1999, Pages

Optical absorption and photoluminescence studies of n-type GaN

(6) Zhao, Guang Yuan a Ishikawa, Hiroyasu a Jiang, Hao a Egawa, Takashi a Jimbo, Takashi a Umeno, Masayoshi a

a NAGOYA INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ENERGY GAP; LIGHT ABSORPTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

BAND TAILING EFFECTS; GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033355689 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.l993 Document Type: Article

Times cited : (36)

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