Optical studies of MOCVD-grown GaN-based ferromagnetic semiconductor epilayers and devices

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 2237-2240

  Kane, M H ^a,b   Strassburg, M ^a,c   Fenwick, W E ^a   Asghar, A ^a   Senawiratne, J ^c   Azamat, D ^e   Hu, Z ^c   Malguth, E ^d   Graham, S ^e   Perera, U ^c   Gehlhoff, W ^d   Hoffmann, A ^d   Dietz, N ^c   Summers, C J ^b   Ferguson, I T ^a,b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Georgia Institute of Technology   (United States)

^c GEORGIA STATE UNIVERSITY   (United States)

^d TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^e GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION BAND; FERROMAGNETIC EXCHANGE; SELF-COMPENSATING NITROGEN; ULTRAVIOLET ILLUMINATION; 75.50.AK; 78.20.CI; 78.30.FS; 78.55.CR; 81.05.EA; 81.05.ZX; 81.15.GH;

CRYSTAL LATTICES; ELECTRON ENERGY LEVELS; GALLIUM NITRIDE; LIGHT ABSORPTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING; DOPING (ADDITIVES); EPILAYERS; FERROMAGNETIC MATERIALS; FERROMAGNETISM; SEMICONDUCTOR DEVICES; SILICON;

MAGNETIC SEMICONDUCTORS; MANGANESE;

EID: 33746343022     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565434     Document Type: Conference Paper

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