Pulsed laser deposition of manganese doped GaN thin films

Solid-State Electronics

Volumn 47, Issue 3, 2003, Pages 533-537

  O'Mahony, D ^a   Lunney, J G ^a   Tobin, G ^b   McGlynn, E ^b  

^a TRINITY COLLEGE DUBLIN   (Ireland)

^b DUBLIN CITY UNIVERSITY   (Ireland)

Author keywords

Dilute magnetic semiconductor; GaMnN; Nitride; PLD

Indexed keywords

MAGNETIC SEMICONDUCTORS; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; QUENCHING; REFLECTOMETERS; SAPPHIRE; THIN FILMS;

LANGMUIR ION PROBES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0037345182     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00408-2     Document Type: Conference Paper

References (22)

1. Pearton SJ, Abernathy CR, Overberg ME, Thaler GT, Onstine AH, Gila BP. et al. New applications for gallium nitride, Materials Today 2002, June ed., p. 24-31.
2. Reed M.L., Ritums M.K., Stadelmaier H.H., Reed M.J., Parker C.A., Bedair S.M.et al. Room temperature ferromagnetic properties of (Ga, Mn)N. App. Phys. Lett. 79(21):2001;3473-3475.
3. Dietl T., Ohno H., Matsukura F., Cibert J., Ferrand D. Zener model description of ferromagnetism in zinc-blende magnetic semiconductors. Science. 287:2000;1019-1022.
4. Lu X.S. Acta Phys. Sin. (China). 29:1980;469-484. (phase diagram for Ga-Mn).
5. Ohno H. Making nonmagnetic semiconductors ferromagnetic. Science. 281:1998;951-956.
6. Fukumura T., Zhengwu J., Ohtomo A., Koinuma H., Kawasaki M. An oxide-diluted magnetic semiconductor: Mn-doped ZnO. App. Phys. Lett. 75(21):1999;3366-3368.
7. Hansen T.N., Schou J., Lunney J.G. Langmuir probe study of plasma plume expansion in pulsed laser ablation. App. Phys. A. 69:1998;601-604.
8. X Supercond. Sci. Technol. 8(7):1995;504-506.
9. Mah K., McGlynn E., Castro J., Lunney J.G., Mosnier J.P., O'Mahony D.et al. Defect luminescence of GaN grown by pulsed laser deposition. J. Cryst. Growth. 222:2001;497-502.
10. 2 atmospheres using stigmatic emission spectroscopy. App Surf Sci. 197-198:2002;325-330.
11. Korotkov R.Y., Gregie J.M., Wessels B.W. Mn-related absorption and PL bands in GaN grown by metal organic vapor phase epitaxy. Physica B. 308-310:2001;30-33.
12. Vispute R.D., Talyansky V., Sharma R.P., Choopun S., Downes M., Venkatesan T.et al. Advances in pulsed laser deposition of nitrides and their integration with oxides. App. Surf. Sci. 127-129:1998;431-439.
13. Hoffmann A., Eckey L., Maxim P., Holst J.-C., Heitz R., Hofmann D.M.et al. Dynamical study of the yellow luminescence band in GaN. Solid-State Electron. 41(2):1997;275-278.
14. Geiger F., Busse C.A., Loehrke R.I. The vapour pressure of indium, silver, gallium, copper, tin and gold, between 0.1 and 3.0 bar. Intl. J. Thermophys. 8(4):1987;425-436.
15. Vispute R.D., Talyansky V., Sharma R.P., Choopun S., Downes M., Venkatesan T.et al. Growth of epitaxial GaN films by pulsed laser deposition. App. Phys. Lett. 71(1):1997;102-104.
16. 2 App. Phys. Lett. 73(10):1998;1394-1396.
17. Geohegan D.B., Puretzky A. Dynamics of laser ablation plume penetration through low pressure background gases. App. Phys. Lett. 67(2):1995;197-199.
18. Hansen T.N., Schou J., Lunney J.G. Ion time-of-flight study of laser ablation of silver ion in low-pressure gases. App. Surf. Sci. 138-139:1999;184-187.
19. Ehlert T.C. A mass spectrometric study of the sublimation of manganese. J. Inorg. Nucl. Chem. 31:1969;2705-2710.
20. Bozorth R., Ferromagnetism:1993;IEEE Press, New York. [ref. 32O1].
21. Grzegory I., Jun J., Krukowski S., Bockowski M., Porowski S. Crystal growth of III-N compounds under high nitrogen pressure. Physica B. 185:1993;99-102.
22. Liu M., Kitai A.H., Mascher P. Point defects and luminescence centres in zinc oxide and zinc oxide doped with manganese. J. Lumin. 54:1992;35-42. and references therein.