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Volumn 206, Issue 9, 2009, Pages 1972-1977

Comparison of diamond bias enhanced nucleation on Ir and 3C-SiC: A high resolution electron energy loss spectroscopy study

Author keywords

[No Author keywords available]

Indexed keywords

A-CARBON; BIAS-ENHANCED NUCLEATION; CARBON LAYERS; DIAMOND CRYSTALS; DIAMOND GROWTH; DIAMOND NUCLEATION; ELEMENTAL SEMICONDUCTORS; HIGH RESOLUTION ELECTRON ENERGY LOSS SPECTROSCOPY; HYDROGENATED CARBON; NON-CARBIDE FORMING METALS; NUCLEATION LAYERS; NUCLEATION PROCESS; OPTICAL PHONONS; PROCESS STEPS; UNIQUE FEATURES; VARIOUS SUBSTRATES; VIBRATIONAL FEATURES;

EID: 70349088187     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200982204     Document Type: Article
Times cited : (10)

References (27)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.