The nucleation centers formed during bias-enhanced nucleation of diamond on iridium: Structure and stability

Diamond and Related Materials

Volumn 14, Issue 3-7, 2005, Pages 328-334

  Gsell, S ^a   Schreck, M ^a   Bauer, T ^a   Karl, H ^a   Thorwarth, G ^a   Bergmaier, A ^b   Dollinger, G ^b   Stritzker, B ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

Bias enhanced nucleation; Diamond growth and characterization; Heteroepitaxy; Iridium

Indexed keywords

ANNEALING; CHEMICAL MODIFICATION; CHEMICAL VAPOR DEPOSITION; DIAMONDS; ION BOMBARDMENT; NUCLEATION; OXYGEN; TEMPERATURE DISTRIBUTION; TRANSMISSION ELECTRON MICROSCOPY; XENON;

BIAS-ENHANCED NUCLEATION; BUFFER LAYERS; DIAMOND GROWTH AND CHARACTERIZATION; HETEROEPITAXY;

IRIDIUM;

EID: 18444396611     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2004.10.027     Document Type: Conference Paper

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