Bias enhanced diamond nucleation onto 3C-SiC(100) surfaces studied by high resolution X-ray photoelectron and high resolution electron energy loss spectroscopies

Diamond and Related Materials

Volumn 17, Issue 3, 2008, Pages 377-382

  Arnault, J C ^a   Saada, S ^a   Michaelson, Sh ^b   Hangaly, N K ^b   Akhvlediani, R ^b   Hoffman, A ^b  

^a DIF   (France)

^b TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

Bias growth; C H bonding configuration; Optical phonon; Silicon carbide; Surface characterization

Indexed keywords

DIAMONDS; ELECTRON ENERGY LOSS SPECTROSCOPY; HYDROGENATION; NUCLEATION; PHONONS; X RAY PHOTOELECTRON SPECTROSCOPY;

BIAS GROWTH; BONDING CONFIGURATION; CARBONACEOUS LAYERS; OPTICAL PHONONS; SURFACE CHARACTERIZATION;

SILICON CARBIDE;

EID: 40749106991     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2008.01.032     Document Type: Article

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