Comparative collector design in InGaAs and GaAsSb based InP DHBTs

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2008, Pages

  Nodjiadjim, V ^a   Riet, M ^a   Scavennec, A ^a   Berdaguer, P ^a   Gentner, J L ^a   Godin, J ^a   Bove, P ^b   Lijadi, M ^b  

^a NOKIA RESEARCH CENTER   (United States)

^b Picogiga International SAS   (France)

Author keywords

Base collector transit time; GaAsSb base; InGaAs base; InP heterojunction bipolar transistor

Indexed keywords

BASE-COLLECTOR TRANSIT TIME; BASE-COLLECTORS; COLLECTOR CURRENTS; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; GAASSB BASE; HETEROSTRUCTURES; INGAAS BASE; INP; INP HETEROJUNCTION BIPOLAR TRANSISTOR; OPERATING CURRENTS; TRANSIT TIME; TYPE II;

BICMOS TECHNOLOGY; BIPOLAR TRANSISTORS; HETEROJUNCTIONS; INDIUM PHOSPHIDE; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 70149098769     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2008.4702996     Document Type: Conference Paper

References (9)

1. T", IPRM 2007, pp. 403-406.
2. K.Kurishima, H.Nakajima, T.Kobayashi, Y.Matsuoka, T.Ishibashi "Minimized collector current blocking in InP/InGaAs DHBTs grown by MOCVD", Int. Symp. GaAs and Related Compounds, Karuizawa, 1992.
3. max InP/InGaAs double heterojuntion bipolar transistors with a thin pseudomorphic base", IEEE Electron Device Letters, vol. 23, no. 12, pp. 694-696, December 2002.
4. A.Fujihara, Y.Ikenaga, H.Takahashi, M.Kawanaka, S.Tanaka, "Highspeed InP/InGaAs DHBTs with ballistic collector launcher structure" Proc. IEDM, paper 35.3.1, 2001.
5. A.Konczykowska, F. Jorge, M. Riet, S. Blayac, J. Moulu, J. Godin,"DFF-drivers ICs for 40 Gb/s ETDM in InP DHBT technology" IMS 04, vol.1, pp. 113-116, 6-11 June 2004.
6. S. Blayac, M. Kahn, M. Riet, P. Berdaguer and J. Godin, "Simple and accurate method to extract intrinsic and extrinsic base-collector capacitance of bipolar transistors", Electronics Letters, vol.39, no.17, pp. 1282-1283, August 2003.
7. M.J.W. Rodwell et al., "Submicron scaling of HBTs", IEEE Transactions on Electron Devices, vol. 48, no. 11, pp. 2606-2624, November 2001.
8. H.G. Liu, N. Tao, S.P. Watkins and C.R. Bolognesi, "Extraction of the average collector velocity in high-speed NpN InP/GaAsSb/InP DHBTs", IPRM 2004, pp. 556-557.
9. H.G. Liu, Y. P. Zeng, O. Ostinelli and C.R. Bolognesi, "Kirk effect in type-II InP/GaAsSb DHBTs with a collector doping spike", IPRM 2007, pp. 409-411.