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Volumn , Issue , 2007, Pages 409-412

Kirk effect in type-II INP/GAASSB DHBTs with a collector doping spike

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); HYDRODYNAMICS; SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 34748898928     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2007.381211     Document Type: Conference Paper
Times cited : (1)

References (6)
  • 3
    • 10644289529 scopus 로고    scopus 로고
    • Extraction of the average collector velocity in high-speed "Type-II" InP-GaAsSb-InP DHBTs
    • H.G. Liu, N.G. Tao, S.P. Watkins and C.R. Bolognesi, "Extraction of the average collector velocity in high-speed "Type-II" InP-GaAsSb-InP DHBTs," IEEE Electron Device Letters, vol. 25, pp. 769-771, 2004.
    • (2004) IEEE Electron Device Letters , vol.25 , pp. 769-771
    • Liu, H.G.1    Tao, N.G.2    Watkins, S.P.3    Bolognesi, C.R.4
  • 4
    • 24344445553 scopus 로고    scopus 로고
    • C.R. Bolognesi, H.G. Liu, N. Tao, X. Zhang, S. Bagheri-Najimi and S.P. Watkins, Neutral base recombination in InP/GaAsSb/InP double heterostructure bipolar transistors: Suppression of Auger recombination in p+ GaAsSb base layers, Appl. Phys. Lett., 86, pp. 253506-1-3, 2005.
    • C.R. Bolognesi, H.G. Liu, N. Tao, X. Zhang, S. Bagheri-Najimi and S.P. Watkins, "Neutral base recombination in InP/GaAsSb/InP double heterostructure bipolar transistors: Suppression of Auger recombination in p+ GaAsSb base layers," Appl. Phys. Lett., vol. 86, pp. 253506-1-3, 2005.
  • 5
    • 0009932839 scopus 로고
    • Effect of collector-base valence band discontinuity on Kirk effect in double heterojunction bipolar transistors
    • B. Mazhari and H. Morkoc, "Effect of collector-base valence band discontinuity on Kirk effect in double heterojunction bipolar transistors," Appl. Phys. Lett., vol. 59, pp. 2162-2164, 1991.
    • (1991) Appl. Phys. Lett , vol.59 , pp. 2162-2164
    • Mazhari, B.1    Morkoc, H.2
  • 6
    • 24144455641 scopus 로고    scopus 로고
    • High current effects in double heterojunction bipolar transistors
    • M. Yee and P.A. Houston, "High current effects in double heterojunction bipolar transistors," Semiconductor Science and Technology, vol. 20, pp. 412-417, 2005.
    • (2005) Semiconductor Science and Technology , vol.20 , pp. 412-417
    • Yee, M.1    Houston, P.A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.