Simple and accurate method to extract intrinsic and extrinsic base-collector capacitance of bipolar transistors

Electronics Letters

Volumn 39, Issue 17, 2003, Pages 1282-1283

  Blayac, S ^a   Kahn, M ^a   Riet, M ^a   Berdaguer, P ^a   Godin, J ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; MATHEMATICAL MODELS; SCATTERING PARAMETERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

BASE COLLECTOR CAPACITANCE; CAPACITANCE DISTRIBUTION;

BIPOLAR TRANSISTORS;

EID: 0042914299     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030834     Document Type: Article

References (5)

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2. Ardouin, B., Zimmer, T., Mnif, H., and Fouillat, P.: 'Direct method for bipolar base-emitter and base-collector capacitance splitting using high-frequency measurements'. Proc Bipolar Circuits and Technology Meetings, Minneapolis, MN, USA, 2001, pp. 114-117
3. Wasige, E., Sheinman, B., Sidorov, V., Cohen, S., and Ritter, D.: 'An analytic expression for the HBT extrinsic base-collector capacitance derived from S-parameter measurements'. IEEE Microwave Theory and Techniques Symp. Dig., 2002, pp. 733-736
4. Kloosterman, W.J., Paasschens, J.C.J., and Klaassen, D.B.M.: 'Improved extraction of base and emitter resistance from small signal high frequency admittance measurements'. Proc Bipolar Circuits and Technology Meetings, Minneapolis, MN, USA, 1999, pp. 93-96
5. Godin, J., Riet, M., Blayac, S., Berdaguer, P., Dhalluin, V., Alexandre, F., Kahn, M., Pinquier, A., Kasbari, A., Moulu, J., and Konczykowska, A.: 'InP DHBT technology and design for 40 Gbit/s full-rate-clock communication circuits'. GaAs IC Symp. Dig., Monterey, CA, USA, 2002, pp. 215-218