Impact of nitridation on negative and positive charge buildup in SiC j gate oxides

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 803-806

  Rozen, John ^a   Dhar, Sarit ^a,b   Wang, Sanwu ^c   Afanas'ev, V V ^d   Pantelides, S T ^b   Williams, J R ^e   Feldman, L C ^a,b  

^a VANDERBILT UNIVERSITY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c UNIVERSITY OF TULSA   (United States)

^d UNIVERSITY OF LEUVEN   (Belgium)

^e AUBURN UNIVERSITY   (United States)

Author keywords

Charge injection; Hole trapping; Interface state generation; MOSCAPs; NO annealing

Indexed keywords

ALUMINUM NITRIDE; CHARGE INJECTION; GATES (TRANSISTOR); HOLE TRAPS; NITROGEN; SILICA; SILICON CARBIDE; SILICON OXIDES;

ATOMIC LEVELS; CARRIER INJECTION; HOLE TRAPPING; MOSCAPS; NO ANNEALING; POSITIVE CHARGES; SIO2/SIC INTERFACE; STATE GENERATIONS;

INTERFACE STATES;

EID: 63849151525     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (7)

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7. J. Rozen, S. Dhar, S. Wang, S. K. Dixit, V. V. Afanas'ev, S. T. Pantelides, J. R. Williams, and L. C. Feldman, to be published.