Growth, processing, and optical properties of epitaxial Er 2O3 on silicon

Optics Express

Volumn 16, Issue 24, 2008, Pages 19649-19666

  Michael, C P ^a   Yuen, H B ^b   Sabnis, V A ^b   Johnson, T J ^a   Sewell, R ^b   Smith, R ^b   Jamora, A ^b   Clark, A ^b   Semans, S ^b   Atanackovic, P B ^b   Painter, O ^a  

^a California Institute of Technology   (United States)

^b Translucent Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; ERBIUM; LOW POWER ELECTRONICS; SILICON; SILICON WAFERS; SINGLE CRYSTALS;

BACKGROUND LOSS; EPITAXIALLY GROWN; IONIC CRYSTALS; LIFETIME MEASUREMENTS; MATERIAL CHARACTERIZATIONS; MICRODISK RESONATORS; RADIATIVE EFFICIENCY; RESONANT ABSORPTION;

OPTICAL PROPERTIES;

EID: 56749165124     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.16.019649     Document Type: Article

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